Ion Implantation Services

We can meet widely ranging requirements for ion implantation with various ion implanters and offer analysis services with various analysis devices.

Ion implantation services

Dopant elements N、C、F、P、As、B、Ge、Si、Sb、In、O、H、etc
Acceleration energy 200eV ~ 4.6MeV

※ Constraints of size of wafer may be imposed depending on the measureing equipment.

Analyze services

Sheet resistance measurement, crystal fault detection, surface impurities analysis,
impurities profile analysis, minor constituent analysis, and film thickness measurement
※ Constraints may be imposed depending on the type of ion and size of wafer.

Major facilities

DevicesTypeManufacturers
High current ion implanter LEX3 SEN Corporation
High current ion implanter LEX SEN Corporation
High current ion implanter NV-GDSⅢ-LED SEN Corporation
High current ion implanter NV-GSD-HC3 SEN Corporation
Medium current ion implanter MC3シリーズ SEN Corporation
High energy ion implanter NV-GSD-HE3 SEN Corporation
High energy ion implanter NV-GSD-HE SEN Corporation
Wafer surface inspection device LS-6800 Hitachi High-Technologies Corporation
TXRF analyzer TREX630 Technos Co., Ltd.
ICP-MS Agilent 7500CS Yokogawa Analytical Systems, Inc.
Wafer review SEM (EDS analysis) RS-3000 Hitachi High-Technologies Corporation
Scanning electron microscope (EDS analysis) JSM-5800LV JEOL Ltd.
Sheet resistance measuring equipment RS-100 KLA-Tencor Corporation
TW measuring equipment TP630 KLA-Tencor Corporation

Film thickness measuring device –spectroscopic ellipsometer

UT-300 HORIBA, Ltd.
RTP SUMMIT 300XT Axcelis Technologies
RTP Reliance850 Axcelis Technologies
Vertical furnace VF-1000 Koyo Thermo Systems Co., Ltd.

 

Our Equipment